Navitas Semiconductor has released a new generation of highly-integrated GaN power ICs. The new GaNSlim power semiconductors target small form factor, high-power-density applications with high integration and high thermal performance. Target applications include chargers for mobile devices and laptops, TV power supplies and lighting.
(Source: Navitas Semiconductor)
“GaNSlim enables the simplest, fastest, and smallest system design by integrating drive, control, and protection, with integrated EMI control and loss-less current sensing, all within a high thermal performance proprietary DPAK-4L package,” Navitas said.
The integrated loss-less current sensing eliminates external current sensing resistors and optimizes system efficiency and reliability. The over-temperature protection delivers system robustness and the auto sleep-mode increases light and no-load efficiency. In addition, the autonomous turn-on/off slew rate control maximizes efficiency and power density as well as reduces external component count, system cost and electromagnetic interference (EMI), Navitas said.
GaNSlim devices are housed in a 4-pin, high-thermal-performance, low-profile, low-inductance, DPAK package. This package enables 7°C lower temperature operation versus conventional alternatives, supporting high-power-density designs with ratings up to 500 W, Navitas said. The GaNSlim devices are compatible with industry-standard SOT23-6 controllers and eliminate HV startup, with an ultra-low startup current below 10 µA.
The NV614x GaNSlim devices are rated at 700 V with RDS(ON) ratings from 120 mΩ to 330 mΩ. They are available in versions optimized for both isolated and non-isolated topologies.
GaNSlim devices have a twenty-year warranty. Demo boards are available for QR flyback, single-stage PFC, boost PFC plus QR flyback and TV power supply designs.
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